Fuji Electric

As a Fuji Electric distributor, NAC offers high power IGBT & MOSFET semiconductor solutions for larger, Inverter, UPS, and Motordrive applications.

Fuji Electric offers a wide line-up of environmentally friendly semiconductor-based products ranging from power modules, which are an indispensable component in energy-saving power electronics, MOSFET, diodes, and control IC needed in high-efficiency power supplies. Their products are used heavily in low to medium voltage inverters, Wind/Power Generation, Welding Machines, Railroad, Solar Inverters, Un-interruptible power supplies for PC/Server applications, and automotive.

Products

Insulated Gate Bi-Polar Trasistor (IGBT)

Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.

Product Line Up:

PIM
6-Pack Modules
4-Pack Modules
2-Pack Modules
1-Pack Modules
High Speed Modules
Advanced NPC Modules
IPM
Chopper
Discrete

Featured Improvements with 6th Generation Die:

Achieves smaller packaging and enhanced output power!
Utilizes high-performance, low-loss 6th generation "V Series" IGBT and FWD
Tj max 175°C, continuous operation guaranteed at 150°C
Improvement of trade-off between noise and loss
Suppression of noise and vibration via dv/dt, dic/dt reductions
SiC Devices

SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.

Product Lineup:

Silicon Carbide Hybrid Modules
SiC Schottky Barrier Diodes

Features

SiC-SBD Equipped IGBT Hybrid Module V Series Utilize high performance low loss V series IGBT and SiC-SBD
Low switching characteristics ideal for High frequency operation of power supplies and miniaturization & weight reductions for systems
Low VF characteristics (low temperature dependency)
Low IR Characteristics – Tj=175°C guaranteed, high temperature operation of power supplies, low loss, high efficiency.
High reverse surge withstand capability
Package compatibility with conventional Si-IGBT module prodcuts
Power MOSFETs

Fuji Electric has a lineup of power MOSFETs ranging from medium to high-voltage types with features such as low power loss, low noise, and low on-resistance. They have also developed the "Super J MOS®" Series, which adopts super-junction technology, mainly for 600V products.

MOSFETs(30V - 60V)
MOSFETs(100V - 300V)
MOSFETs(400V - 500V)
MOSFETs(600V - 700V)
Multi-chip Power Device for Switching PowerSupply
Automotive Discrete MOSFETs
Power Supply Control IC

Fuji Electric offers a line-up of AC/DC and DC/DC power supply control ICs that support a variety of power circuits. These highly efficient, low-noise products with low standby power consumption are compatible with environmental regulations. Furthermore, the many protection functions are built into the ICs themselves, allowing for smaller power circuits.

AC/DC PWM Control
AC/DC Green mode Quasi-resonant
High-side and Low-side Driver IC(HVIC)
DC/DC Power Supply Control ICs
Automotive Power ICs
Rectifier Diodes
Fuji Electric's rectifier diodes have features such as low VF characteristics and low IR, and are compatible with PFC circuits of power supplies and secondary-side rectification circuits.
Schottky-Barrier Diodes(SBD) - Single
Schottky-Barrier Diodes (SBD)- Dual
Fast Recovery Diodes(FRD)- Single
Fast Recovery Diodes(FRD)- Dual

NAC Global Headquarters: 10001 16th Street North Saint Petersburg, Fl 33716 TF- 866.651.2901 P- 727.828.0187 F-727.828.0160

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