Cissoid Gate Driver

CMT-TIT0697

Features:

• Designed to drive XM3 1200V/300A SiC MOSFET modules
• Operating temperature: -40°C to 125°C
• Bus voltage:1200V max
• 14mm creepage/12mm clearance
• Isolation: 3600VAC @50Hz (1min)

CMT-TIT8243

Features:

• Designed to drive XM3 1200V/300A SiC MOSFET modules
• Operating temperature: -40°C to 125°C
• Bus voltage:1200V max
• 14mm creepage/12mm clearance
• Isolation: 3600VAC @50Hz (1min)

CMT-TIT8244

Features:

• Designed to drive XM3 1200V/300A SiC MOSFET modules
• Operating temperature: -40°C to 125°C
• Bus voltage:1700V max
• 14mm creepage/12mm clearance
• Isolation: 3600VAC @50Hz (1min)

CMT-HADES2P

Features:

• Operating temperature: -55°C to +175°C
• Supply voltage: 10-16.5V
• Configurable Under-Voltage Lockout
• Integrated flyback DC-DC converter
• Transceiver

CMT-HADES2S

Features:

• Operating temperature: -55°C to +175°C
• Supply voltage: 10-16.5V
• Configurable Under-Voltage Lockout
• Integrated flyback DC-DC converter
• Transceiver

EVK-HADES®1210

Features:

• Board size: 68mm * 54mm
• CISSOID Active components guaranteed for -55° to +225°C (Tj)
• 200°C Polyimide PCB
• Isolated High-side and Low-side gate drivers
• Delay time (PWM to VOUT): 200ns typ.

CHT-HADES2P

Features:

• Operating temperature: -55°C to +225°C
• Supply voltage: 10-16.5V
• Configurable Under-Voltage Lockout
• Configurable local non-overlap management
• Open-drain Dual Fault outputs

CHT-HADES2S

Features:

• Operating temperature: -55°C to +225°C
• Supply voltage: 5 to 30V
• Max PWM frequency : 1MHz
• Propagation delay: 160 ns typ.
• Rise time / fall time (CLoad=1nF): 30ns typ

HYPERION

Features:

• Operating temperature: -55°C to +225°C
• Floating High-side driver sustains boost voltages of up to 50 V
• Fast rise and fall times
• Output peak current in excess of 1A
• Integrated High-Side Bootstrap Diode

ATLAS

Features:

• Temperature range: -55°C to 225°C
• Scalable sink/source current from 2A to 20A
• Supply Voltage: 5V to 30V
• Capable to drive normally-On and normally-Off power devices
• Available Package: Ceramic SOIC28

THEMIS

Features:

• Temperature range: -55°C to 225°C
• Supply Voltage: 5 to 30V
• Adjustable Under-voltage lockout (UVLO)
• De-saturation detection circuit
• Active Miller clamping (AMC) support

RHEA

Features:

• Temperature range: -55°C to +225°C
• Data rate: 2Mbits/s
• Transmission delay below 100ns)
• Jitter lower than 21ns
• Immunity to dV/dt : 50kV/µs.